| PART |
Description |
Maker |
| 2SJ353 2SJ353-T D11216EJ1V0DS00 |
From old datasheet system
P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
P-channel MOS-type silicon field effect transistor (-60
|
NEC[NEC]
|
| HAT2202C HAT2202C-15 |
Silicon N Channel MOS FET powerswitching
Silicon N Channel MOS FET Power Switching
|
Renesas Electronics Corporation
|
| UPA675T UPA675T-T1 UPA675T-T2 UPA675T-A |
100 mA, 16 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
N-channel enhancement type MOS FET
|
NEC
|
| 2SJ574 |
Silicon P Channel MOS FET High Speed Switching
|
HITACHI[Hitachi Semiconductor]
|
| 2SK3348 |
Silicon N Channel MOS FET High Speed Switching
|
HITACHI[Hitachi Semiconductor]
|
| 2SJ574 |
Silicon P Channel MOS FET High Speed Switching
|
Renesas Electronics Corporation
|
| 2SJ587 |
Silicon P Channel MOS FET High Speed Switching
|
HITACHI[Hitachi Semiconductor]
|
| 2SJ586 |
Silicon P Channel MOS FET High Speed Switching
|
HITACHI[Hitachi Semiconductor]
|
| 2SJ0536 |
Silicon P-Channel MOS FET
Silicon P-Channel MOS FET 100 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
PANASONIC CORP
|
| RJL6018DPK-00-T0 RJL6018DPK |
Silicon N Channel MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
